FDG8850NZ

The FDG8850NZ is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

• Very small package outline
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
• ±12V Gate to source voltage
• 0.75A Continuous drain current
• 2.2A Pulsed drain current

Avvertenze

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