TBD62783AFWG(Z,EHZ

TBD62783AFWG(Z,EHZ is a TBD62783A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.

• 8 channel source type DMOS transistor array
• High voltage is 50V (max, Ta = 25°C), high current is -500mA (max, for each channel, Ta = 25°C)
• Input voltage range from 2 to 25V (output on, IOUT = -100mA or upper, VDS=2V, Ta = −40 to 85°C)
• Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
• Output leakage current is 1.0μA (max, VCC = 50V, VIN = 0V, Ta = 85°C)
• Clamp diode reverse current is 1.0μA (max, VR = 50V, Ta = 85°C)
• Turn on delay is 0.4μs (max, VCC = 50V, RL = 125ohm, CL = 15pF)
• Turn off delay is 2.0μs (max, VCC = 50V, RL = 125ohm, CL = 15pF)
• P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C

Note

Please be careful about thermal conditions during use.