TBD62308AFG(Z,EL)

TBD62308AFG(Z,EL) is a BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.

• 4 channel low active high current sink type DMOS transistor array
• High voltage is 50V (max, Ta = 25°C), high current is 1.5mA/ch (max, Ta = 25°C)
• Input voltage range from 0 to VCC-3.5V (output on, IOUT=100mA or upper, VOUT=2V, Ta = -40 to 85°C)
• COMMON pin voltage is 50V (max, Ta = -40 to 85°C)
• Output leakage current is 1.0μA (max, VIN = VCC, VOUT = 50Vm, Ta = 85°C)
• Clamp diode forward current is 1.25A at Ta = −40 to 85°C
• Turn on delay is 1.0μs (typ, VOUT = 50V, RL = 42ohm, CL = 15pF, VCC = 5.0V)
• Turn off delay is 2.0μs (typ, VOUT = 50V, RL = 42ohm, CL = 15pF, VCC = 5.0V)
• HSOP16-P-300-1.00 package, operating temperature range from -40 to 85°C

Note

Please be careful about thermal conditions during use.