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1+ | € 0,886 |
10+ | € 0,638 |
100+ | € 0,506 |
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2500+ | € 0,413 |
5000+ | € 0,406 |
Informazioni sui prodotti
Panoramica del prodotto
The UCC27511DBVR is a 1-channel High-speed Low-side Gate Driver that can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27511 is capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13ns. UCC27511 features a dual-input design which offers flexibility of implementing both inverting (IN- pin) and non-inverting (IN+ pin) configuration with the same device. Either IN+ or IN- pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable functions. For safety purpose, internal pull-up and pull-down resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin is not left floating and must be properly biased to ensure that driver output is in enabled for normal operation.
- 4A Peak source and 8A peak sink asymmetrical drive
- Strong sink current offers enhanced immunity against miller turn-on
- Fast propagation delays (13ns typical)
- Fast rise and fall times (9ns and 7ns typical)
- Outputs held low during VDD UVLO
- TTL and CMOS compatible input-logic threshold (independent of supply voltage)
- Hysteretic-logic thresholds for high noise immunity
- Dual-input design (choice of an inverting (IN- pin)/non-inverting (IN+ pin) driver configuration)
- Unused input pin can be used for enable or disable function
- Output held low when input pins are floating
- Input pin absolute maximum voltage levels not restricted by VDD pin bias supply voltage
- Green product and no Sb/Br
Avvertenze
Questo dispositivo ha una protezione ESD incorporata limitata, si prega pertanto di cortocircuitare insieme i cavi o di collocare il dispositivo in una schiuma conduttiva quando viene maneggiato o messo da parte, in modo da prevenire danni elettrostatici ai gate MOS.
Specifiche tecniche
1Canali
low side
6Pin
montaggio superficiale
4A
4.5V
-40°C
-
-
MSL 1 - Non Limitata
-
IGBT, MOSFET
SOT-23
Invertente, non invertente
8A
18V
140°C
-
-
No SVHC (27-Jun-2018)
Documenti tecnici (1)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:Thailand
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto