STGAP2GSCTR

STGAP2GSCTR is a galvanically isolated 3A single gate driver for enhancement mode GaN FETs. It provides galvanic isolation between the gate driving channel, low voltage control, and interface circuitry. The gate driver is characterized by 2A source and 3A sink capability and rail-to-rail outputs, making the device also suitable for mid and high-power applications such as power conversion and motor driver inverters in industrial applications. The device allows independently optimize turn-on and turn-off by using dedicated gate resistors. The device integrates protection functions including thermal shutdown and UVLO with optimized levels for Enhancement-mode GaN FETs, which enables easy design high efficiency, and reliable systems. Typical applications are motor driver for home appliances, factory automation, industrial drives and fans, 600/1200V inverters, wireless chargers, UPS, power supply units, DC-DC converters, and power factor correction.

• Driver current capability is 2A / 3A source/sink at 25°C, VH = 6V
• dV/dt transient immunity is ±100V/ns
• Input-output propagation delay is 45ns, gate driving voltage up to 15V
• Separate sink and source option for easy gate driving configuration
• UVLO function optimized for GaN
• 3.3V, 5V TTL/CMOS inputs with hysteresis
• Temperature shut-down protection, standby function
• Standby VDD quiescent supply current is 65µA max (TJ = 25°C, VH = 6V, VDD = 5V)
• SO-8 package
• Operating junction temperature range from -40 to 125°C