NCV51563BBDWR2G

NCV51563BBDWR2G is an isolated dual channel gate driver with 4.5A/9A source and sink peak current respectively. It is designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. It offers short and matched propagation delays. Two independent and 5kVRMS internal galvanic isolation from input to each output and internal functional isolation between the two output drivers allows a working voltage of upto 1850VDC. This driver can be used in any possible configurations of two low side, two high side switches or a half bridge driver with programmable dead time. An ENA/DIS pin shutdowns both outputs simultaneously when set low or high for DISABLE mode respectively. It also offers other important protection functions such as independent under voltage lockout for both gate drivers and a dead time adjustment function. Typical applications include on board chargers, XEV DC−DC converters, traction inverters, charging stations.

• Independent UVLO protections for both output drivers, 8V ULVO
• Common mode transient immunity CMTI <gt/> 200V/ns
• Propagation delay typ 36ns with 5ns max delay matching per channel, 5ns max pulse width distortion
• User programmable input logic single or dual input modes via ANB
• User programmable dead time
• 5kVRMS isolation for 1 minute (per UL1577 requirements)
• 8000VPK reinforced isolation voltage (per VDE0884−11 requirements)
• CQC certification per GB4943.1−2011, SGS FIMO certification per IEC 62386−1
• SOIC−16 WB package, ambient temperature range from -40 to +125°C