FDA59N30
MOSFET di potenza, canale N, 300 V, 59 A, 0.056 ohm, TO-3P, foro passante (THT)
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| Quantità | |
|---|---|
| 1+ | € 5,010 |
| 10+ | € 2,220 |
| 100+ | € 2,150 |
| 500+ | € 2,080 |
| 1000+ | € 1,990 |
Informazioni sui prodotti
Panoramica del prodotto
The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% Avalanche tested
Specifiche tecniche
canale N
59A
TO-3P
10V
500W
150°C
-
Lead (27-Jun-2024)
300V
0.056ohm
foro passante (THT)
5V
3Pin
-
-
Documenti tecnici (2)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:China
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto