Ti serve altro?
Quantità | |
---|---|
1+ | € 754,840 |
Informazioni sui prodotti
Panoramica del prodotto
Three-phase inverter reference design and evaluation board populated with six GD3160 gate drivers for IGBT/SiC MOSFET devices. This board supports SPI daisy chain communication for programming and communication with three high-side gate drivers and three low-side gate drivers independently and comes with fault management and supporting circuitry. Evaluation kit is designed to connect to a compatible HybridPACK™ Drive SIC/IGBT module or onsemi VE-trac™ IGBT module for full three phase inverter applications development.
- 3 phase reference design for HP drive featuring GD3160
- GD3160 advanced single channel gate driver for IGBT and SiC MOSFETs
- Integrated galvanic signal isolation (up to 8KV)
- SPI interface for safety monitoring, configuration and diagnostic reporting
- Fail-safe state management from LV and HV domain for user-selectable safe state
- Configurable desaturation and current sense optimized for protecting SiC and IGBTs
- Integrated ADC for monitoring parameters from HV domain
- Certified compliant with ISO 26262, supporting ASIL D level functional safety
Contenuti
Three-phase inverter reference design and evaluation board, Quick start guide.
Specifiche tecniche
NXP
Gate Driver IGBT/SiC
Scheda di design di riferimento GD3160, cavo PCIe (S32SDEV-CON18), sacchetto antistatico, guida rapida
No SVHC (27-Jun-2024)
GD3160
Controllo Motori EV 3 Fasi
-
Documenti tecnici (1)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:United States
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto