PSMN2R0-30YLDX

PSMN2R0-30YLDX is a logic level gate drive N-channel enhancement mode MOSFET in the LFPAK56 package. NextPowerS3 portfolio utilizing NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high-efficiency applications at high switching frequencies. Applications include on-board DC-to-DC solutions for server and telecommunications, secondary-side synchronous rectification in telecommunication applications, voltage regulator modules (VRM), point-of-load (POL) modules, power delivery for V-core, ASIC, DDR, GPU, VGA, and system components, brushed and brushless motor control.

• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery; s-factor <gt/> 1, low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with <lt/> 1µA leakage at 25°C
• Optimised for 4.5V gate drive, low parasitic inductance and resistance
• High reliability clip bonded and solder die attach power SO8 package; no glue, no wire bonds
• Wave solderable; exposed leads for optimal visual solder inspection
• Drain-source voltage is 30V max (25 to 175°C), drain current is 100A max (VGS = 10V; Tmb = 25°C)
• Total power dissipation is 142W max, drain-source on-state resistance is 2.1mohm typ (Tj = 25°C)
• Gate-drain charge is 63nC typ, total gate charge is 46nC typ (ID = 25A; VDS = 15V; VGS = 10V)
• 4 leads SOT669 package, junction temperature range from -55 to 175°C