2N6052.

The 2N6052 is a high-performance PNP silicon Darlington power transistor, engineered for applications requiring high current handling, high voltage tolerance, and extremely high current gain. Encapsulated in a rugged TO-3 metal can package, this transistor is built to deliver reliable performance under demanding thermal and electrical conditions. With a collector current rating up to 10A, collector-emitter voltage up to –100V, and DC current gain exceeding 1000, the 2N6052 is ideal for power switching, motor control, and high-side load driving in both consumer and industrial electronics. The integrated Darlington pair offers high gain with minimal base current, making it particularly effective in low-drive control systems and buffer stages.

• PNP Darlington bipolar power transistor
• Collector-emitter voltage (VCEO): –100V
• Collector current (IC): up to 10A
• DC current gain (hFE): <gt/>1000
• TO-3 metal package for superior heat dissipation
• Low base drive requirements
• Designed for linear and switching applications