MCP607-I/SN

MCP607-I/SN is a dual micropower CMOS operational amplifier. It is a unity-gain stable with a low offset voltage (250µV, maximum). Performance characteristics include rail-to-rail output swing capability and low input bias current (80pA at +85°C, maximum). These features make this family of op-amps well-suited for single-supply, precision, high-impedance, battery-powered applications. Typical applications battery power instruments, high-impedance applications, strain gauges, medical instruments, and test equipment.

• Input offset voltage range from -250 to +250µV (VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C)
• Power supply rejection ratio is 93dB typ (VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C)
• Input bias current is 80pA max (TA = +85°C, VDD = +2.5V to +5.5V, VSS = GND)
• Quiescent current per amplifier is 18.7µA (IO = 0, VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C)
• Common mode rejection ratio is 91dB typ (VDD = 5V, VCM = -0.3V to 3.9V, TA = +25°C)
• Gain bandwidth product is 155KHz typ (VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C)
• Slew rate is 0.08V/µs typ (VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C)
• Phase margin is 62° typ (G = +1 V/V, VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C)
• Input offset drift with temperature is ±1.8µV/°C typ (VDD = +2.5V to +5.5V, TA = -40°C to +85°C)
• 8 pin SOIC package, industrial operating temperature range from -40 to 85°C

Avvertenze

Dispositivo sensibile alle scariche ESD, prendere le dovute precauzioni nel maneggiare lo strumento.

Note

ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.