DS28EC20P+T

DS28EC20P+T is a 20480-bit, 1-Wire® EEPROM organized as 80 memory pages of 256 bits each. An additional page is set aside for control functions. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, blocks of eight memory pages can be write protected or put in EPROM-emulation mode, where bits can only be changed from a 1 to a 0 state. The DS28EC20 communicates over the single-conductor 1-wire bus. The communication follows the standard 1-wire protocol. Typical applications include device authentication, IEEE 1451.4 sensor TEDS, ink/toner cartridges, medical sensors, PCB identification, wireless base stations.

• Read and write access highly backward compatible to legacy devices (e.g., DS2433)
• 256-bit scratchpad with strict read/write protocols ensures integrity of data transfer
• 200k write/erase cycle endurance at +25°C
• Switchpoint hysteresis and filtering to optimize performance in the presence of noise
• Enhanced ESD protection
• 1-wire pullup resistance is 2.2Kohm max at VPUP=4V to 5.25V, TA=-40°C to +85°C
• EEPROM programming current is 0.9mA max at VPUP=4V to 5.25V, TA=-40°C to +85°C
• EEPROM programming time is 10ms max at VPUP=4V to 5.25V, TA=-40°C to +85°C
• 6 TSOC package
• Operating temperature range from -40°C to +85°C

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