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Quantità | |
---|---|
1+ | € 6,020 |
10+ | € 5,500 |
25+ | € 5,390 |
50+ | € 5,360 |
100+ | € 4,800 |
250+ | € 4,780 |
500+ | € 4,330 |
Informazioni sui prodotti
Panoramica del prodotto
IS62WV51216EBLL-45BLI is a 512Kx16 low voltage, ultra-low power CMOS static RAM. It is a high-speed, 8Mbit static RAM organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When active-low CS1 is HIGH (deselected) or when CS2 is low (deselected) or when active-low CS1 is low, CS2 is high and both active-low LB and active-low UB and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
- High-speed access time is 45ns
- CMOS low power operation, 36mW (typical) operating
- TTL compatible interface levels
- Single power supply is 2.2V-3.6V VDD
- Data control for upper and lower bytes
- Input capacitance is 10pF (TA = 25°C, f = 1MHz, VDD = VDD(typ))
- Mini BGA package
- Industrial temperature rating range from -40°C to +85°C
Specifiche tecniche
SRAM asincrona
512K x 16 bit
48Pin
2.2V
-
-40°C
-
No SVHC (16-Jul-2019)
8Mbit
Mini BGA
3.6V
3.3V
montaggio superficiale
85°C
MSL 3 - 168 ore
Documenti tecnici (1)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:Taiwan
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto