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Quantità | |
---|---|
100+ | € 0,763 |
250+ | € 0,718 |
500+ | € 0,703 |
1000+ | € 0,688 |
2500+ | € 0,651 |
Informazioni sui prodotti
Panoramica del prodotto
The IR2104STRPBF is a high voltage high speed power MOSFET and IGBT Half-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout
- 3.3, 5 and 15V Logic input compatible
- Cross-conduction prevention logic
- Internally set dead-time
- High-side output in phase with input
- Shut down input turns OFF both channels
- Matched propagation delay for both channels
Avvertenze
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Note
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Specifiche tecniche
2Canali
mezzo ponte
8Pin
montaggio superficiale
210mA
10V
-40°C
680ns
-
MSL 2 - 1 anno
-
MOSFET
SOIC
Non-Invertente
360mA
20V
125°C
150ns
-
No SVHC (21-Jan-2025)
Documenti tecnici (2)
Prodotti associati
1 prodotto trovato
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:Philippines
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto