IDW40G120C5BFKSA1
Diodo Schottky al carburo di silicio, thinQ, catodo comune, 1.2 kV, 110 A, 202 nC, TO-247
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| Quantità | |
|---|---|
| 1+ | € 12,990 |
| 5+ | € 12,170 |
| 10+ | € 11,350 |
| 50+ | € 10,530 |
| 100+ | € 9,710 |
| 250+ | € 8,890 |
Informazioni sui prodotti
Panoramica del prodotto
5th Generation thinQ!™ 1200V SiC schottky diode suitable for use in solar inverters, uninterruptable power supplies, motor drives and power factor correction. Benefits of using Schottky diode are system efficiency improvement over Si diodes, enabling higher frequency / increased power density solutions, system size/cost savings due to reduced heatsink requirements and smaller magnetics, reduced EMI, highest efficiency across the entire load range, robust diode operation during surge events and high reliability.
- Revolutionary semiconductor material - silicon carbide
- No reverse recovery current / no forward recovery
- Temperature independent switching behaviour
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Qualified according to JEDEC for target applications
Avvertenze
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Specifiche tecniche
thinQ
1.2kV
202nC
3 Pin
foro passante (THT)
No SVHC (21-Jan-2025)
catodo comune
110A
TO-247
175°C
-
Documenti tecnici (1)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:China
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto