FF23MR12W1M1B11BOMA1

The CoolSiC™ MOSFET from Infineon is a leading edge solution to bring designs towards new unattainable efficiency and power density levels. In comparison to traditional Si based switches like IGBTs and MOSFETs, the SiC MOSFET offers advantages such as lowest gate charge and device capacitances levels seen in 1200V switches, no reverse recovery losses of internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics. The TO-247-4 pin package of CoolSiC™ MOSFET contains an additional connection to the source that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3 pin version, especially at higher currents and higher switching frequencies. Easy1B modules(EasyDUAL™) offer a very good thermal interface, a low stray inductance and robust design as well as PressFIT connections.

• CoolSiC™ are first products targeted for photovoltaic inverters, battery charging, energy storage
• Superior gate oxide reliability
• Best in class switching and conduction losses
• IGBT compatible driving (+15V), threshold voltage of Vth = 4V, Short-circuit robustness
• Efficiency improvement and reduced cooling effort
• Significant reduction in junction temperature for longer lifetime and higher reliability
• Enables higher frequency operation for reduction in system cost and shrink
• 2 level topologies can replace 3-level with same efficiency for lower complexity and cost
• Allows for increase in power density, ease of design and implementation
• Excellent for hard switching and resonant switching topologies like LLC and ZVS

Applicazioni

gestione potenza elettrica, ambito industriale, ambito medicale

Avvertenze

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