Avvisami non appena disponibile
Quantità | |
---|---|
1+ | € 4,630 |
10+ | € 4,620 |
25+ | € 4,610 |
50+ | € 4,600 |
100+ | € 4,590 |
250+ | € 4,580 |
Informazioni sui prodotti
Panoramica del prodotto
CY7C1041GN30-10BVXIT is a CY7C1041GN high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the chip enable active-low (CE) and write enable active-low (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The byte high enable active-low (BHE) and byte low enable active-low (BLE) inputs control write operations to the upper and lower bytes of the specified memory location. Active-low BHE controls I/O8 through I/O15 and active-low BLE controls I/O0 through I/O7. Data reads are performed by asserting the chip enable active-low (CE) and output enable active-low (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O15). Byte accesses can be performed by asserting the required byte enable signal active-low (BHE or BLE) to read either the upper byte or the lower byte of data from the specified address location.
- High speed, tAA = 10ns
- Low active and standby currents, active current: ICC = 38mA typical
- 1.0-V data retention, TTL-compatible inputs and outputs
- 2.2V–3.6V voltage range
- 48-ball VFBGA package
- 4Mbit density, × 16-bits data width
- 65nm process technology
- Industrial operating temperature range from –40°C to +85°C
Specifiche tecniche
SRAM asincrona
4Mbit
da 2,2V a 3,6V
VFBGA
48Pin
10ns
-
montaggio superficiale
85°C
-
4Mbit
256Kword x 16 bit
256K parole x 16 bit
VFBGA
2.2V
3.6V
-
-40°C
-
No SVHC (21-Jan-2025)
Documenti tecnici (1)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:Philippines
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto