Ti serve altro?
| Quantità | |
|---|---|
| 1+ | € 102,400 |
| 5+ | € 98,380 |
| 10+ | € 94,360 |
Informazioni sui prodotti
Panoramica del prodotto
CY14B116N-ZSP25XI is a CY14B116N fast SRAM, with a non-volatile element in each memory cell. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM can be read and written an infinite number of times. The non-volatile data residing in the non-volatile elements do not change when data is written to the SRAM. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory.
- 16Mbit non-volatile static random access memory (nvSRAM)
- Hands-off automatic STORE on power-down with only a small capacitor
- STORE to QuantumTrap non-volatile elements is initiated by software
- RECALL to SRAM initiated by software or power-up, high reliability
- Infinite read, write, and RECALL cycles, 1 million STORE cycles to QuantumTrap
- Sleep mode operation, low power consumption, active current of 75mA at 45ns
- Industrial temperature range from –40°C to +85°C
- 25ns speed, 54-pin TSOP II speed
- 3V voltage rating, ×16 data bus
Specifiche tecniche
16Mbit
1M x 16 bit
25ns
2.7V
TSOP-II
54Pin
parallela
-40°C
-
16Mbit
1M x 16bit
25ns
3.6V
TSOP-II
interfaccia parallela
montaggio superficiale
85°C
No SVHC (21-Jan-2025)
Documenti tecnici (1)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:Philippines
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto