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Quantità | |
---|---|
1+ | € 1,670 |
10+ | € 1,230 |
50+ | € 1,130 |
100+ | € 1,000 |
250+ | € 0,937 |
500+ | € 0,902 |
1000+ | € 0,873 |
2500+ | € 0,859 |
Informazioni sui prodotti
Panoramica del prodotto
1EDB7275FXUMA1 is a EiceDRIVER™ 1EDBx275F series single-channel isolated gate driver ICs in 150 mil DSO package. It is a single-channel isolated gate driver IC designed to drive Si, SiC and GaN power switches. 1EDB7275FXUMA1 is available in an 8-pin DSO package with 4mm input-to-output creepage distance, it provides isolation by means of on-chip coreless transformer (CT) technology. With tight timing specifications, 1EDBx275F is designed for fast-switching medium-to-high power systems. Excellent common-mode rejection, low part-to-part skew, fast signal propagation and small package size make 1EDBx275F a superior alternative to high-side driving solutions using optocouplers or pulse transformers.
- 5A / 9A peak source / sink current, 4.2V / 3.9V UVLO ON / OFF
- UL 1577 (VISO = 3000 VRMS) isolation certification
- 45ns input-to-output propagation delay with excellent accuracy (+6/-4 ns)
- Separate low impedance source and sink outputs
- Fast clamping of parasitics-induced output overshoots under UVLO conditions
- Fast start-up times and fast recovery after supply glitches
- Optimized UVLO levels (4V, 8V, 12V, 15V) for Si, SiC and GaN transistors
- High common-mode transient immunity (CMTI > 300V/ns)
- Fully qualified according JEDEC for industrial applications
- Junction temperature range from -40 to 150°C
Specifiche tecniche
1Canali
High Side
8Pin
montaggio superficiale
5.4A
3V
-40°C
45ns
-
MSL 3 - 168 ore
isolato
GaN, Si MOSFET, SiC MOSFET
SOIC
Invertente, non invertente
9.8A
15V
125°C
45ns
-
No SVHC (21-Jan-2025)
Documenti tecnici (1)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:China
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto