FM25L16B-G

FM25L16B-G is a 16-Kbit (2K × 8) serial (SPI) F-RAM. It is a 16-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the FM25L16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. The application includes a general-purpose motor drive - with variating frequency and voltage.

• Voltage range from 2.7V to 3.6V, SPI F-RAM
• 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8
• High-endurance 100 trillion read/writes, 151-year data retention
• No Delay™ writes, advanced high-reliability ferroelectric process
• Direct hardware replacement for serial flash and EEPROM, supports SPI mode 0 (0,0) and mode 3 (1,1)
• Hardware protection using the Write Protect (active low WP) pin
• S/W protection using write disable instruction, S/W block protection for 1/4, 1/2 or entire array
• VDD standby current is 3µA max (active low, CS=VDD, All other inputs VSS or VDD
• Output pin capacitance (SO) is 8pF max (TA=25°C, f=1 MHz, VDD=VDD(typ))
• 8-pin SOIC package, industrial operating temperature range from -40 to +85°C