CY62146ELL-45ZSXI

The CY62146ELL-45ZSXI is a 4MB high performance CMOS Static Random Access Memory (SRAM) organized as 256K words by 16-bit. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Lifeä (MoBL®) in portable applications. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. The input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled, both byte high enable and byte low enable are disabled or during a write operation. To write to the device, take chip enable and write enable inputs LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins.

• Very high speed - 45ns
• Ultralow standby power
• Ultralow active power
• Easy memory expansion with CE and OE
• Automatic power down when deselected
• CMOS for optimum speed/power