CY15B108QI-20LPXI

CY15B108QI-20LPXI is a low-power, 8-Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the CY15X108QI performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories.

• 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8
• Infineon instant non-volatile write technology, advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI), up to 20MHz frequency
• Hardware protection using the write protect (active-low WP) pin
• Software protection using write disable (WRDI) instruction
• Dedicated 256-byte special sector F-RAM, dedicated special sector write and read
• VDD range from 1.8V to 3.6V, 1.3mA typical active current at 20MHz
• 3.5µA typ standby current, 0.90µA typ deep power down mode current
• 0.1µA typ hibernate mode current, 1.6mA typ inrush current during power up
• Industrial operating temperature range from -40°C to +85°C, 8-pin GQFN package

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.