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Informazioni sui prodotti
Alternative per CY62167DV30LL-55ZXI..
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Panoramica del prodotto
The CY62167DV30LL-55ZXI is a 16Mb high-performance CMOS static RAM organized as 1M words by 16-bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected. The input/output pins are placed in a high-impedance state when deselected, outputs are disabled, both byte high enable and byte low enable are disabled or during a write operation. Writing to the device is accomplished by taking chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins.
- Ultra-low standby power
- Easy memory expansion with CE1, CE2 and OE
- Automatic power-down when deselected
- CMOS for optimum speed/power
Specifiche tecniche
SRAM asincrona
1M x 16 bit
48Pin
3.6V
-
-40°C
-
No SVHC (17-Jan-2023)
16Mbit
TSOP
2.2V
3V
montaggio superficiale
85°C
MSL 3 - 168 ore
Documenti tecnici (1)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:United States
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto