ADL8108ACPZN-R7

ADL8108ACPZN-R7 is a highly integrated, 1GHz to 8GHz, low noise amplifier (LNA). On-chip features include input and output AC coupling capacitors, an integrated bias inductor, an integrated temperature sensor, and an enable or disable pin (VPD). Typical gain, output power 1dB compression (OP1dB), third-order intercept point (OIP3), second-order intercept point (OIP2), and noise figure are 20dB, 22dBm, 35.5, 42 dBm, and 1dB, respectively, from 3GHz to 4.5GHz. The nominal operating current (IDQ), which can be adjusted, is 90mA operating from a 5V supply voltage (VDD). Operation at 3V is also supported. The ADL8108 is fabricated on a pseudomorphic high electron mobility transistor (pHEMT) process. Applications includes telecommunications, test instrumentation and military.

• Single positive supply: 5V and IDQ of 90mA nominal
• RBIAS drain current adjustment pin
• Integrated temperature sensor
• Integrated enable and disable function
• Gain: 20dB typical from 3GHz to 4.5GHz
• OIP3: 35.5dBm typical from 1GHz to 4.5GHz
• Noise figure: 1dB typical from 3GHz to 6GHz
• Extended operating temperature range from -55°C to +125°C
• 16-lead LFCSP package