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Quantità | |
---|---|
1+ | € 6,600 |
10+ | € 6,200 |
25+ | € 5,860 |
50+ | € 5,820 |
100+ | € 5,780 |
250+ | € 5,630 |
500+ | € 5,100 |
Informazioni sui prodotti
Panoramica del prodotto
AS7C4096A-12JIN is a 5.0V 4Mb (512K × 8) CMOS fast SRAM. It is a high-performance CMOS 4,194,304-bit static random access memory (SRAM) device organized as 524,288 words × 8bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. The chip enable input active-low CE permits easy memory expansion with multiple-bank memory systems. When active-low CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage.
- Center power and ground pins
- Low power consumption: 880mW/max at 10ns (active), 55mW/max CMOS (standby)
- Equal access and cycle times
- Easy memory expansion with active-low CE, active-low OE inputs
- TTL-compatible, three-state I/O
- JEDEC standard packages
- ESD protection is ≥ 2000volts
- Latch-up current is ≥ 200mA
- 12ns access time, SOJ package
- Industrial temperature range from -40°C to 85°C
Specifiche tecniche
asincrona
512K x 8 bit
36Pin
5.5V
-
-40°C
-
No SVHC (27-Jun-2024)
4Mbit
SOJ
4.5V
5V
montaggio superficiale
85°C
MSL 3 - 168 ore
Documenti tecnici (1)
Legislazione e ambiente
Paese in cui si è svolta l'ultima parte più significativa del processo produttivoPaese d'origine:Taiwan
Paese in cui si è svolta l'ultima parte più significativa del processo produttivo
RoHS
RoHS
Certificato di conformità del prodotto