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BPW85B
Phototransistor, 850 nm, 25 °, 100 mW, 2 Pins, T-1 (3mm)
Image is for illustrative purposes only. Please refer to product description.
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €0.684 |
| 10+ | €0.440 |
| 25+ | €0.405 |
| 50+ | €0.370 |
| 100+ | €0.335 |
| 500+ | €0.285 |
Price for:Each
Minimum: 1
Multiple: 1
€0.68 (ex VAT)
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Product Overview
- Leaded silicon NPN phototransistor in clear, T-1 plastic package
- High photo sensitivity and high radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response times
- Angle of half sensitivity: ϕ = ± 25°
- 4mA maximum collector light current at Ee = 1 mW/cm2, λ = 950nm, VCE = 5V
Technical Specifications
Wavelength Typ
850nm
Power Consumption
100mW
Transistor Case Style
T-1 (3mm)
Automotive Qualification Standard
-
Viewing Angle
25°
No. of Pins
2Pins
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000171
Product traceability