Print Page
STU9HN65M2
Power MOSFET, N Channel, 650 V, 5.5 A, 0.71 ohm, TO-251, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTU9HN65M2
Order Code3132767
Product RangeMDmesh M2
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTU9HN65M2
Order Code3132767
Product RangeMDmesh M2
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id5.5A
Drain Source On State Resistance0.71ohm
Transistor Case StyleTO-251
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh M2
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.5A
Transistor Case Style
TO-251
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.71ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
MDmesh M2
SVHC
No SVHC (17-Dec-2015)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00035
Product traceability