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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €1.190 |
| 500+ | €1.170 |
| 1500+ | €1.140 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
€124.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFSC1D6N06CL
Order Code3265482RL
Product RangeDUAL COOL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id235A
On Resistance Rds(on)0.00125ohm
Drain Source On State Resistance1500µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd166W
Power Dissipation166W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeDUAL COOL
Qualification-
Automotive Qualification Standard-
SVHCLead (27-Jun-2024)
Product Overview
NTMFSC1D6N06CL is a dual COOL N-channel MOSFET. Typical application includes o-ring FET/load switching, synchronous rectifier, DC to DC conversion.
- Ultra low RDS(on)
- 60V maximum drain to source breakdown voltage (VGS = 0V, ID = 250µA)
- 10µA maximum zero gate voltage drain current (TJ = 25°C, VGS = 0V, VDS = 60V)
- 1.25mohm typical drain to source on resistance (VGS = 10V, ID = 50A, TJ = 25°C)
- 6660pF typical input capacitance (VGS = 0V, f = 1MHz, VDS = 25V)
- 2ohm typical gate resistance (TA = 25°C)
- 14.5ns typical turn on delay time (VGS = 10V, VDS = 48V, ID = 50A, RG = 1ohm)
- 55.6ns typical rise time (VGS = 10V, VDS = 48V, ID = 50A, RG = 1ohm)
- 14.1ns typical fall time (VGS = 10V, VDS = 48V, ID = 50A, RG = 1ohm)
- DFN8 package, operating junction and storage temperature range from -55 to +175°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.00125ohm
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation Pd
166W
No. of Pins
8Pins
Product Range
DUAL COOL
Automotive Qualification Standard
-
SVHC
Lead (27-Jun-2024)
Transistor Polarity
N Channel
Continuous Drain Current Id
235A
Drain Source On State Resistance
1500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
166W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability