HUF75639G3
Power MOSFET, N Channel, 100 V, 56 A, 0.025 ohm, TO-247, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €3.890 |
| 10+ | €3.700 |
| 100+ | €2.290 |
| 500+ | €1.880 |
| 1000+ | €1.870 |
Product Information
Product Overview
The HUF75639G3 is a N-channel Power MOSFETs manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery operated products.
- Peak current vs. pulse width curve
- UIS Rating curve
- Temperature compensated PSPICE®/SABER™ electrical, SPICE & SABER thermal impedance simulation models
Applications
Power Management, Portable Devices, Motor Drive & Control
Technical Specifications
N Channel
56A
TO-247
10V
200W
175°C
-
Lead (27-Jun-2024)
100V
0.025ohm
Through Hole
4V
3Pins
-
-
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate