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ZVN3320FTA
Power MOSFET, Enhancement Mode, N Channel, 200 V, 60 mA, 25 ohm, SOT-23, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | €0.571 |
| 50+ | €0.427 |
| 100+ | €0.307 |
| 500+ | €0.228 |
| 1500+ | €0.193 |
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€2.85 (ex VAT)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZVN3320FTA
Order Code2061497
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id60mA
Drain Source On State Resistance25ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation330mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
ZVN3320FTA is a N-channel enhancement mode vertical MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include DC-DC converters, power-management functions, battery operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low input capacitance, low input/output leakage
- Drain-source voltage is 200V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is 60mA at TA=+25°C
- Maximum body diode forward current is 60mA at TA=+25°C
- Pulsed source current (10µs pulse, duty cycle=1%) is 1A at TA=+25°C
- Power dissipation is 330mW
- Static drain-source on-resistance is 17ohm typ at VGS=10V, ID=100mA
- SOT23 package
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
330mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000544
Product traceability