ZVN3320FTA

ZVN3320FTA is a N-channel enhancement mode vertical MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include DC-DC converters, power-management functions, battery operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

• Low input capacitance, low input/output leakage
• Drain-source voltage is 200V at TA=+25°C
• Gate-source voltage is ±20V at TA=+25°C
• Continuous drain current is 60mA at TA=+25°C
• Maximum body diode forward current is 60mA at TA=+25°C
• Pulsed source current (10µs pulse, duty cycle=1%) is 1A at TA=+25°C
• Power dissipation is 330mW
• Static drain-source on-resistance is 17ohm typ at VGS=10V, ID=100mA
• SOT23 package
• Operating and storage temperature range from -55 to +150°C

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.