Reduced PricesOffersContact UsHelpTrack Ordersin italiano
Register
0
0 Items€0.00
ex VAT
ex VAT

0.041ohm Gallium Nitride (GaN) FETs:

11 Products Found
Find a huge range of 0.041ohm Gallium Nitride (GaN) FETs at Farnell Italy. We stock a wide range of Gallium Nitride (GaN) FETs, such as 0.07ohm, 0.041ohm, 0.14ohm & 0.18ohm Gallium Nitride (GaN) FETs from the worlds top manufacturers including: Renesas & Nexperia
View
Buyer
Engineer
Manufacturer
Drain Source Voltage Vds
Continuous Drain Current Id
Drain Source On State Resistance
Typical Gate Charge
Transistor Case Style
Transistor Mounting
No. of Pins
Product Range
Qualification
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice ForQuantity
GAN041-650WSBQ
NEXPERIA GAN041-650WSBQ
3759053

Data Sheet

RoHS

Date/Lot Code

NEXPERIA
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 47.2 A
  4. 0.041 ohm
  5. 22 nC
  6. TO-247
  7. Through Hole
Each
1+
€13.780
5+
€13.130
10+
€12.470
50+
€11.610
100+
€10.740
More Pricing...
Min: 1 / Mult: 1
650V
47.2A
0.041ohm
22nC
TO-247
Through Hole
3Pins
-
-
TP65H030G4PQS-TR
RENESAS TP65H030G4PQS-TR
4680966RL

RoHS

Date/Lot Code

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 55.7 A
  4. 0.041 ohm
  5. 24.5 nC
  6. TOLL
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
10+
€13.720
50+
€12.550
100+
€11.380
250+
€11.150
Min: 10 / Mult: 1
650V
55.7A
0.041ohm
24.5nC
TOLL
Surface Mount
9Pins
SuperGaN Series
-
TP65H035G4YS
RENESAS TP65H035G4YS
4680953

Data Sheet

RoHS

Date/Lot Code

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 46.5 A
  4. 0.041 ohm
  5. 42.7 nC
  6. TO-247
  7. Through Hole
Each
1+
€23.490
5+
€20.140
10+
€16.790
50+
€15.360
100+
€13.930
More Pricing...
Min: 1 / Mult: 1
650V
46.5A
0.041ohm
42.7nC
TO-247
Through Hole
4Pins
SuperGaN Series
-
TP65H030G4PQS-TR
RENESAS TP65H030G4PQS-TR
4680966

RoHS

Date/Lot Code

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 55.7 A
  4. 0.041 ohm
  5. 24.5 nC
  6. TOLL
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+
€19.200
5+
€16.460
10+
€13.720
50+
€12.550
100+
€11.380
More Pricing...
Min: 1 / Mult: 1
650V
55.7A
0.041ohm
24.5nC
TOLL
Surface Mount
9Pins
SuperGaN Series
-
TP65H035G4QS-TR
RENESAS TP65H035G4QS-TR
4371961

Data Sheet

RoHS

Date/Lot Code

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 46.5 A
  4. 0.041 ohm
  5. 22 nC
  6. TOLL
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+
€17.900
5+
€15.050
10+
€12.260
50+
€10.510
100+
€9.910
More Pricing...
Min: 1 / Mult: 1
650V
46.5A
0.041ohm
22nC
TOLL
Surface Mount
8Pins
SuperGaN Series
-
TP65H035G4WSQA
RENESAS TP65H035G4WSQA
4371964

Data Sheet

RoHS

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 47.2 A
  4. 0.041 ohm
  5. 22 nC
  6. TO-247
  7. Through Hole
Each
1+
€18.910
5+
€18.570
10+
€18.230
50+
€16.220
100+
€14.220
More Pricing...
Min: 1 / Mult: 1
650V
47.2A
0.041ohm
22nC
TO-247
Through Hole
3Pins
SuperGaN Series
AEC-Q101
TP65H035G4QS-TR
RENESAS TP65H035G4QS-TR
4371961RL

Data Sheet

RoHS

Date/Lot Code

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 46.5 A
  4. 0.041 ohm
  5. 22 nC
  6. TOLL
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
10+
€12.260
50+
€10.510
100+
€9.910
250+
€9.710
Min: 10 / Mult: 1
650V
46.5A
0.041ohm
22nC
TOLL
Surface Mount
8Pins
SuperGaN Series
-
TP65H030G4PWS
RENESAS TP65H030G4PWS
4680965

Data Sheet

RoHS

Date/Lot Code

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 55.7 A
  4. 0.041 ohm
  5. 24.5 nC
  6. TO-247
  7. Through Hole
Each
1+
€18.110
5+
€15.530
10+
€12.940
50+
€11.840
100+
€10.740
More Pricing...
Min: 1 / Mult: 1
650V
55.7A
0.041ohm
24.5nC
TO-247
Through Hole
3Pins
SuperGaN Series
-
TP65H035G4WS
RENESAS TP65H035G4WS
4371962

Data Sheet

RoHS

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 46 A
  4. 0.041 ohm
  5. 22 nC
  6. TO-247
  7. Through Hole
Each
1+
€17.780
5+
€17.470
10+
€17.150
50+
€11.220
100+
€10.660
More Pricing...
Min: 1 / Mult: 1
650V
46A
0.041ohm
22nC
TO-247
Through Hole
3Pins
SuperGaN Series
-
TP65H030G4PRS-TR
RENESAS TP65H030G4PRS-TR
4680954

Data Sheet

RoHS

Date/Lot Code

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 55.7 A
  4. 0.041 ohm
  5. 24.5 nC
  6. TOLT
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+
€19.170
5+
€16.430
10+
€13.700
50+
€12.530
100+
€11.370
More Pricing...
Min: 1 / Mult: 1
650V
55.7A
0.041ohm
24.5nC
TOLT
Surface Mount
16Pins
SuperGaN Series
-
TP65H030G4PRS-TR
RENESAS TP65H030G4PRS-TR
4680954RL

Data Sheet

RoHS

Date/Lot Code

RENESAS
  1. Gallium Nitride (GaN) Transistor
  2. 650 V
  3. 55.7 A
  4. 0.041 ohm
  5. 24.5 nC
  6. TOLT
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
10+
€13.700
50+
€12.530
100+
€11.370
250+
€11.130
Min: 10 / Mult: 1
650V
55.7A
0.041ohm
24.5nC
TOLT
Surface Mount
16Pins
SuperGaN Series
-
1-11 of 11 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
M3S SiC Series
ONSEMI
M3S SiC Series
ONSEMI
CoolSiC™ Trench MOSFET
INFINEON
CoolSiC™ Trench MOSFET
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
N-Channel Power MOSFET
INFINEON
N-Channel Power MOSFET
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Norton Secured
BSI 9001
Visa
Mastercard
AMEX
Trade Account