0.03ohm Gallium Nitride (GaN) FETs | Farnell Italy

Find a huge range of 0.03ohm Gallium Nitride (GaN) FETs at Farnell Italy. We stock a wide range of Gallium Nitride (GaN) FETs, such as 0.07ohm, 0.041ohm, 0.14ohm & 0.18ohm Gallium Nitride (GaN) FETs from the worlds top manufacturers including: Infineon

Filter(s) Applied

Drain Source On State Resistance

:

0.03ohm

1 Filter(s) Selected

Compare					Price For		Quantity

	IGT65R025D2ATMA1	4695746 Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 70 A 0.03 ohm 11 nC HSOF Surface Mount		Each (Supplied on Cut Tape) Cut Tape	1+ €16.210 5+ €13.840 10+ €11.790 50+ €10.580 100+ €9.760 More Pricing...	Min: 1 / Mult: 1	650V	70A	0.03ohm	11nC	HSOF	Surface Mount	8Pins	CoolGaN G5 Series
	IGT65R025D2XTMA1	4640393 Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 70 A 0.03 ohm 11 nC HSOF Surface Mount		Each (Supplied on Cut Tape) Cut Tape	1+ €16.210 5+ €13.840 10+ €11.790 50+ €10.580 100+ €9.760 More Pricing...	Min: 1 / Mult: 1	650V	70A	0.03ohm	11nC	HSOF	Surface Mount	8Pins	CoolGaN G5 Series
	IGOT65R025D2AUMA1	4573844 Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 61 A 0.03 ohm 11 nC SOIC Surface Mount		Each (Supplied on Cut Tape) Cut Tape	1+ €10.840 5+ €10.180 10+ €9.510 50+ €8.740 100+ €8.220 More Pricing...	Min: 1 / Mult: 1	650V	61A	0.03ohm	11nC	SOIC	Surface Mount	20Pins	CoolGaN G5 Series
	IGOT65R025D2AUMA1	4573844RL Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 61 A 0.03 ohm 11 nC SOIC Surface Mount		Each (Supplied on Cut Tape) Re-Reel Packaging Options	10+ €9.510 50+ €8.740 100+ €8.220 250+ €7.970	Min: 10 / Mult: 1	650V	61A	0.03ohm	11nC	-	-	20Pins	-
	IGT65R025D2XTMA1	4640393RL Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 70 A 0.03 ohm 11 nC HSOF Surface Mount		Each (Supplied on Cut Tape) Re-Reel Packaging Options	10+ €11.790 50+ €10.580 100+ €9.760 250+ €9.560	Min: 10 / Mult: 1	650V	70A	0.03ohm	11nC	-	-	8Pins	-
	IGLT65R025D2AUMA1	4573850RL Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 67 A 0.03 ohm 11 nC HDSOP Surface Mount		Each (Supplied on Cut Tape) Re-Reel Packaging Options	10+ €12.550 50+ €11.230 100+ €10.770 250+ €10.250	Min: 10 / Mult: 1	650V	67A	0.03ohm	11nC	-	-	16Pins	-
	IGLT65R025D2AUMA1	4573850 Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 67 A 0.03 ohm 11 nC HDSOP Surface Mount		Each (Supplied on Cut Tape) Cut Tape	1+ €15.200 5+ €13.880 10+ €12.550 50+ €11.230 100+ €10.770 More Pricing...	Min: 1 / Mult: 1	650V	67A	0.03ohm	11nC	HDSOP	Surface Mount	16Pins	CoolGaN G5 Series

Items per page:

1-7 of 7 items

of 1 page(s)

Popular Suppliers

ONSEMI

NEXPERIA

VISHAY

STMICROELECTRONICS

MULTICOMP PRO

INFINEON

NXP

ROHM

New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET

TP65H035G4YS - gallium nitride (GaN) FET

RENESAS

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

ONSEMI

CoolSiC™ Trench MOSFET

CoolSiC™ Trench MOSFET

INFINEON

EconoDUAL™ 3 product family for medium power applications

EconoDUAL™ 3 product family for medium power applications

INFINEON

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

NEXPERIA

New onsemi 650v SiC MOSFETs

New onsemi 650v SiC MOSFETs

ONSEMI

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

ANALOG DEVICES

New Toshiba SiC Schottky Barrier Diodes

New Toshiba SiC Schottky Barrier Diodes

TOSHIBA

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

LITTELFUSE

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

N-Channel Power MOSFET

N-Channel Power MOSFET

INFINEON

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA