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SISH892BDN-T1-GE3
Power MOSFET, N Channel, 100 V, 20 A, 0.0304 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSISH892BDN-T1-GE3
Order Code3729616
Product RangeTrenchFET Gen IV
Technical Datasheet
19,119 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €0.950 |
| 10+ | €0.711 |
| 100+ | €0.457 |
| 500+ | €0.391 |
| 1000+ | €0.346 |
| 5000+ | €0.309 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISH892BDN-T1-GE3
Order Code3729616
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id20A
Drain Source On State Resistance0.0304ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation29W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
29W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0304ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005
Product traceability