Print Page
SIR680LDP-T1-RE3
Power MOSFET, N Channel, 80 V, 130 A, 2800 µohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIR680LDP-T1-RE3
Order Code3581013RL
Product RangeTrenchFET Gen IV
Technical Datasheet
17,935 In Stock
21,000 more incoming. You can reserve stock now
EXPRESS Delivery in 1-2 business days
Order before 5pm
FREE Standard Delivery
on orders €0.00 and above
Accurate delivery times will be calculated at checkout
| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €1.390 |
| 500+ | €1.130 |
| 1500+ | €1.120 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
€144.00 (ex VAT)
A €5.00 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR680LDP-T1-RE3
Order Code3581013RL
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id130A
On Resistance Rds(on)0.00233ohm
Drain Source On State Resistance2800µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd104W
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Automotive Qualification Standard-
SVHCLead (07-Nov-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.00233ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation Pd
104W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel
Continuous Drain Current Id
130A
Drain Source On State Resistance
2800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00025
Product traceability