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SIR106DP-T1-RE3
Power MOSFET, N Channel, 100 V, 65.8 A, 0.008 ohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIR106DP-T1-RE3
Order Code2846623
Product RangeTrenchFET Gen IV
Technical Datasheet
939 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €1.630 |
| 10+ | €1.360 |
| 100+ | €1.090 |
| 500+ | €0.906 |
| 1000+ | €0.776 |
| 5000+ | €0.737 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR106DP-T1-RE3
Order Code2846623
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id65.8A
Drain Source On State Resistance0.008ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.4V
Power Dissipation83.3W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Product Overview
SIR106DP-T1-RE3 is a N-Channel 100 V (D-S) MOSFET. Application includes synchronous rectification, primary side switch, DC/DC converters, OR-ing, power supplies, motor drive control, battery and load switch.
- TrenchFET® Gen IV power MOSFET
- Very low RDS - Qg figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100 % Rg and UIS tested
- 100V minimum drain-source breakdown voltage (VGS = 0V, ID = 250μA)
- 0.0080 ohm maximum drain-source on-state resistance (VGS =10V, ID = 15A)
- 0.0090 ohm maximum drain-source on-state resistance (VGS = 7.5V, ID = 10A)
- 32nC typical total gate charge (VDS = 50V, VGS = 7.5V, ID = 15A)
- 65.8A maximum continuous source-drain diode current (TC = 25°C)
- PowerPAK SO-8 package, operating junction and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
65.8A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
83.3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.008ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074
Product traceability