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SI3585DV-T1-E3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 2 A, 2 A, 0.1 ohm
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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3585DV-T1-E3
Order Code2335298
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel2A
Continuous Drain Current Id P Channel2A
Drain Source On State Resistance N Channel0.1ohm
Drain Source On State Resistance P Channel0.1ohm
Transistor Case StyleTSOP
No. of Pins6Pins
Power Dissipation N Channel830mW
Power Dissipation P Channel830mW
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI3585DV-T1-E3
1 Product Found
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
2A
Drain Source On State Resistance P Channel
0.1ohm
No. of Pins
6Pins
Power Dissipation P Channel
830mW
Product Range
-
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
2A
Drain Source On State Resistance N Channel
0.1ohm
Transistor Case Style
TSOP
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001