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ManufacturerVISHAY
Manufacturer Part NoSI2315BDS-T1-GE3
Order Code4258100RL
Product RangeTrenchFET Series
Technical Datasheet
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5000+ | €0.243 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2315BDS-T1-GE3
Order Code4258100RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id3A
Drain Source On State Resistance0.05ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
MSL-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Product Range
TrenchFET Series
MSL
-
Technical Docs (2)
Alternatives for SI2315BDS-T1-GE3
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000044
Product traceability