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IRLD110PBF
Power MOSFET, N Channel, 100 V, 1 A, 0.54 ohm, DIP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLD110PBF
Order Code1013423
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1A
Drain Source On State Resistance0.54ohm
Transistor Case StyleDIP
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
- N-channel power MOSFET in HVMDIP package
- Dynamic dV/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- Logic-level gate drive
- 175°C operating temperature
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1A
Transistor Case Style
DIP
Rds(on) Test Voltage
5V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000565