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Quantity | Price (ex VAT) |
---|---|
1+ | €1.130 |
10+ | €0.890 |
100+ | €0.688 |
500+ | €0.584 |
1000+ | €0.520 |
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Multiple: 1
€1.13 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLD014PBF
Order Code9102515
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.7A
Drain Source On State Resistance0.2ohm
Transistor Case StyleDIP
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Product Overview
Third generation power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dV/dot rating
- For automatic insertion
- End stackable
- Logic-level gate drive
- Fast switching
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.7A
Transistor Case Style
DIP
Rds(on) Test Voltage
5V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000549