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TPH6400ENH,L1Q(M
Power MOSFET, N Channel, 200 V, 21 A, 0.064 ohm, SOP, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 5000+ | €1.560 |
| 15000+ | €1.160 |
Price for:Each (Supplied on Full Reel)
Minimum: 5000
Multiple: 5000
€7,800.00 (ex VAT)
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPH6400ENH,L1Q(M
Order Code4320096
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id21A
Drain Source On State Resistance0.064ohm
Transistor Case StyleSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
SOP
Rds(on) Test Voltage
10V
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.064ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000148
Product traceability