STP24N60DM2
Power MOSFET, N Channel, 600 V, 18 A, 0.175 ohm, TO-220AB, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €3.280 |
| 10+ | €2.900 |
| 100+ | €2.490 |
| 500+ | €2.070 |
| 1000+ | €1.660 |
Product Information
Product Overview
STP24N60DM2 is a N-channel 600V, 0.175 ohm typ, 18A FDmesh II Plus™ low Qg Power MOSFET in a TO-220 package. This FDmesh II Plus™ low Qg Power MOSFET with intrinsic fast-recovery body diode is produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. Therefore, suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
- Extremely low gate charge and input capacitance
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
- Operating junction temperature of 150°C
- Suited for switching applications
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
18A
TO-220AB
10V
150W
150°C
-
No SVHC (21-Jan-2025)
600V
0.175ohm
Through Hole
4V
3Pins
FDmesh II Plus
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate