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Manufacturer Standard Lead Time: 19 week(s)
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Quantity | Price (ex VAT) |
---|---|
1+ | €5.160 |
10+ | €3.680 |
100+ | €2.770 |
500+ | €2.460 |
1000+ | €2.410 |
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Multiple: 1
€5.16 (ex VAT)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB35N60DM2
Order Code2531105
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id28A
Drain Source On State Resistance0.094ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation210W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
28A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
210W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.094ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00138
Product traceability