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50+ | €0.676 |
100+ | €0.444 |
500+ | €0.343 |
1000+ | €0.320 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoMJD350T4
Order Code9935282
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max300V
Continuous Collector Current500mA
Power Dissipation15W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The MJD350T4 is a NPN-PNP complementary silicon Power Transistor manufactured using medium voltage Epitaxial Planar technology, resulting in a rugged high performance transistor.
- Surface-mount power package
- Electrical similar to MJE340 and MJE350
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
500mA
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
300V
Power Dissipation
15W
Transistor Mounting
Surface Mount
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for MJD350T4
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000385
Product traceability