Print Page
SKM195GB066D
IGBT Module, Half Bridge, 265 A, 1.45 V, 175 °C, Module
Image is for illustrative purposes only. Please refer to product description.
5 In Stock
16 more incoming. You can reserve stock now
1-2 Working Days Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €115.110 |
| 5+ | €110.460 |
| 10+ | €104.980 |
Price for:Each
Minimum: 1
Multiple: 1
€115.11 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM195GB066D
Order Code2423691
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationHalf Bridge
Continuous Collector Current265A
DC Collector Current265A
Collector Emitter Saturation Voltage Vce(on)1.45V
Collector Emitter Saturation Voltage1.45V
Power Dissipation-
Power Dissipation Pd-
Junction Temperature Tj Max175°C
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max175°C
Transistor Case StyleModule
IGBT TerminationStud
No. of Pins7Pins
Collector Emitter Voltage Max600V
IGBT TechnologyIGBT 3 [Trench]
Transistor MountingPanel
Product Range-
Product Overview
The SKM195GB066D is a SEMITRANS® 2 Trench IGBT Module for use with AC inverter drives and electronic welders. It features VCE(sat) with positive temperature coefficient and high short-circuit capability, self limiting to 6 x IC.
- Half-bridge switch
- Homogeneous Si
- Trench-gate technology
Applications
Power Management, Maintenance & Repair
Technical Specifications
Transistor Polarity
Dual N Channel
Continuous Collector Current
265A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation
-
Junction Temperature Tj Max
175°C
Operating Temperature Max
175°C
IGBT Termination
Stud
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
IGBT Configuration
Half Bridge
DC Collector Current
265A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
Module
No. of Pins
7Pins
IGBT Technology
IGBT 3 [Trench]
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.18