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NVMFS6H801NT3G
Power MOSFET, N Channel, 80 V, 157 A, 2800 µohm, DFN, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €1.020 |
Price for:Each (Supplied on Full Reel)
Minimum: 1
Multiple: 1
€1.02 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS6H801NT3G
Order Code4258219
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id157A
Drain Source On State Resistance2800µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation166W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
157A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
166W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
80V
Drain Source On State Resistance
2800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000833
Product traceability