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NTMFS10N7D2C
Power MOSFET, N Channel, 100 V, 78 A, 7200 µohm, Power 56, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNTMFS10N7D2C
Order Code2768338RL
Product RangePowerTrench Series
Technical Datasheet
414 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €1.920 |
| 500+ | €1.750 |
| 1000+ | €1.660 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
€197.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS10N7D2C
Order Code2768338RL
Product RangePowerTrench Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id78A
Drain Source On State Resistance7200µohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation83W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangePowerTrench Series
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
NTMFS10N7D2C is a power trench, N‐channel, shielded gate MOSFET. This N-channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Application includes primary DC−DC MOSFET, synchronous rectifier in DC−DC and AC−DC, motor drive and solar.
- Lowers switching noise/EMI
- 100% UIL tested
- Drain to source voltage is 100V (TA = 25°C)
- 50% lower Qrr than other MOSFET suppliers
- Gate to source voltage is ±20V (TA = 25°C)
- Drain current is 78A (continuous, TC = 25°C)
- Single pulse avalanche energy is 216mJ (TC = 25°C)
- Power dissipation is 83W (TC = 25°C)
- Turn-on delay time is 13ns (typ, VDD = 50V, ID = 28A, VGS = 10V, RGEN = 6ohm,TJ = 25°C)
- PQFN8 package, operating and storage junction temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
78A
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
7200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
PowerTrench Series
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536
Product traceability