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KSB596YTU
Bipolar (BJT) Single Transistor, PNP, 80 V, 4 A, 30 W, TO-220, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €1.520 |
| 10+ | €0.751 |
| 100+ | €0.669 |
| 500+ | €0.526 |
| 1000+ | €0.486 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoKSB596YTU
Order Code2825101
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max80V
Continuous Collector Current4A
Power Dissipation30W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency3MHz
DC Current Gain hFE Min120hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
4A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
120hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
80V
Power Dissipation
30W
Transistor Mounting
Through Hole
Transition Frequency
3MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003448
Product traceability