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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFGH80N60FD2TU
Order Code1885750
Technical Datasheet
Continuous Collector Current80A
Collector Emitter Saturation Voltage1.8V
Power Dissipation290W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247AD
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The FGH80N60FD2TU is a novel Field Stop IGBT offers the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential.
- High current capability
- High input impedance
- Fast switching
- 1.8V @ IC = 40A Low saturation voltage
Applications
Consumer Electronics, Power Management
Technical Specifications
Continuous Collector Current
80A
Power Dissipation
290W
Transistor Case Style
TO-247AD
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00542