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FDD3510H
Dual MOSFET, Complementary N and P Channel, 80 V, 80 V, 13.9 A, 13.9 A, 0.08 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD3510H
Order Code2825153
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel80V
Drain Source Voltage Vds P Channel80V
Continuous Drain Current Id N Channel13.9A
Continuous Drain Current Id P Channel13.9A
Drain Source On State Resistance N Channel0.08ohm
Drain Source On State Resistance P Channel0.08ohm
Transistor Case StyleTO-252 (DPAK)
No. of Pins5Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
80V
Continuous Drain Current Id P Channel
13.9A
Drain Source On State Resistance P Channel
0.08ohm
No. of Pins
5Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
80V
Continuous Drain Current Id N Channel
13.9A
Drain Source On State Resistance N Channel
0.08ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability